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FQB33N10TM

FQB33N10TM

MOSFET N-CH 100V 33A D2PAK

657-20ABP

657-20ABP

HEATSINK TO-220 W/PINS BLK 2"

FQB33N10TM

FQB33N10TM

Image is for reference, please contact us to get the real picture

Part No :

FQB33N10TM

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 100V 33A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
322332 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 02 - Jun 06 2024
PDF
FQB33N10TM PDF
Type Description
Series:QFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:52mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:51 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.75W (Ta), 127W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQB33N10TM is available at GangBo-ic.com, Please review product page below for detailed information, including FQB33N10TM price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQB33N10TM to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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