WIRE MARKER, 0.75 IN H
MOSFET N-CH 200V 72A D2PAK
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200 V |
Current - Continuous Drain (Id) @ 25°C: | 72A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 22mOhm @ 44A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 150 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 5380 pF @ 50 V |
FET Feature: | - |
Power Dissipation (Max): | 375W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SI4401BDY-T1-E3Vishay / Siliconix |
MOSFET P-CH 40V 8.7A 8SO |
|
IPB26CN10NGATMA1Rochester Electronics |
MOSFET N-CH 100V 35A D2PAK |
|
IPS80R1K2P7AKMA1Rochester Electronics |
MOSFET N-CH 800V 4.5A TO251-3 |
|
BSC118N10NSGRochester Electronics |
BSC118N10 - 12V-300V N-CHANNEL P |
|
BSP89,115Nexperia |
MOSFET N-CH 240V 375MA SOT223 |
|
NVMFS5C423NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 126A 5DFN |
|
SQJA70EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 100V 14.7A PPAK SO-8 |
|
NVD5862NT4GRochester Electronics |
18A, 60V, 0.0057OHM, N-CHANNEL, |
|
AUIRFS4410ZRochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
BSS205NH6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 20V 2.5A SOT23-3 |
|
TPH3207WSTransphorm |
GANFET N-CH 650V 50A TO247-3 |
|
NTHD4N02FT1Rochester Electronics |
MOSFET N-CH 20V 2.9A CHIPFET |
|
FQPF5N60CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 4.5A TO220F |