MOSFET N-CH 200V 56A TO247
SMA-SJ/SMA-SJ G316 6I
DESCRIPTION PLACE HOLDER
Type | Description |
---|---|
Series: | POWER MOS V® |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200 V |
Current - Continuous Drain (Id) @ 25°C: | 56A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 45mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 195 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 4860 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 300W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247 [B] |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
PSMN5R0-100PS,127Nexperia |
MOSFET N-CH 100V 120A TO220AB |
|
IPI80P03P4-05AKSA1Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
AONS66923Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 15A/47A 8DFN |
|
FDFMA2P853Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
FQB33N10TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 33A D2PAK |
|
2SK1464Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
BSN20BKRNexperia |
MOSFET N-CH 60V 265MA TO236AB |
|
BSH111,215Rochester Electronics |
MOSFET N-CH 55V 335MA TO236AB |
|
2SK160A-T1B-ARochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
STD60NF06T4STMicroelectronics |
MOSFET N-CH 60V 60A DPAK |
|
IRLZ44ZSPBFRochester Electronics |
MOSFET N-CH 55V 51A TO263-3-2 |
|
UF3C120150K4SUnitedSiC |
SICFET N-CH 1200V 18.4A TO247-4 |
|
IXFX140N30PWickmann / Littelfuse |
MOSFET N-CH 300V 140A PLUS247-3 |