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BSZ042N04NSGATMA1

BSZ042N04NSGATMA1

MOSFET N-CH 40V 40A TSDSON-8

BSZ042N04NSGATMA1

BSZ042N04NSGATMA1

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Part No :

BSZ042N04NSGATMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 40V 40A TSDSON-8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
41981 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 09 - Feb 13 2025
PDF
BSZ042N04NSGATMA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:4.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:4V @ 36µA
Gate Charge (Qg) (Max) @ Vgs:46 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3700 pF @ 20 V
FET Feature:-
Power Dissipation (Max):2.1W (Ta), 69W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSDSON-8
Package / Case:8-PowerTDFN
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