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Y006264R0000Q9L

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RES 64 OHM 0.6W 0.02% RADIAL

BSZ042N04NSGATMA1

BSZ042N04NSGATMA1

MOSFET N-CH 40V 40A TSDSON-8

9-5-5962

9-5-5962

TAPE DBL COATED BLACK 9"X 5YDS

BSZ042N04NSGATMA1

BSZ042N04NSGATMA1

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Part No :

BSZ042N04NSGATMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 40V 40A TSDSON-8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
41981 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
BSZ042N04NSGATMA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:4.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:4V @ 36µA
Gate Charge (Qg) (Max) @ Vgs:46 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3700 pF @ 20 V
FET Feature:-
Power Dissipation (Max):2.1W (Ta), 69W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSDSON-8
Package / Case:8-PowerTDFN
BSZ042N04NSGATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSZ042N04NSGATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSZ042N04NSGATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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