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RQ3L090GNTB

RQ3L090GNTB

MOSFET N-CH 60V 9A/30A 8HSMT

RQ3L090GNTB

RQ3L090GNTB

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Part No :

RQ3L090GNTB

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 60V 9A/30A 8HSMT
Catalog
Transistors - FETs, MOSFETs - Single
Availability
582258 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 10 - Jan 14 2025
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:13.9mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:2.7V @ 300µA
Gate Charge (Qg) (Max) @ Vgs:24.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1260 pF @ 30 V
FET Feature:-
Power Dissipation (Max):2W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HSMT (3.2x3)
Package / Case:8-PowerVDFN
RQ3L090GNTB is available at GangBo-ic.com, Please review product page below for detailed information, including RQ3L090GNTB price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RQ3L090GNTB to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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