FIXED IND 2.7MH 1.3A 1.14 OHM TH
TVS DIODE 9V 15.4V DO214AA
MOSFET P-CH 20V 7.3A 6MICROFET
CONN D-SUB RCPT 9P PNL MNT SLDR
Type | Description |
---|---|
Series: | PowerTrench® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 7.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 30mOhm @ 7.3A, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20 nC @ 4.5 V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 1645 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 2.4W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 6-MicroFET (2x2) |
Package / Case: | 6-VDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FDMC86012Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 23A POWER33 |
|
APT24M120LRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 24A TO264 |
|
NTMFS4H02NFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 37A/193A 5DFN |
|
IRFU3410PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 31A IPAK |
|
ZXMN2A02N8TAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 8.3A 8SO |
|
IRFB4410PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 88A TO220AB |
|
BSC067N06LS3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FQB7P20TMSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 200V 7.3A D2PAK |
|
IRFW840BTMRochester Electronics |
N-CHANNEL POWER MOSFET |
|
PSMN1R5-40YSDXNexperia |
MOSFET N-CH 40V 240A LFPAK56 |
|
DMP2066LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 6.5A 8SOP |
|
NCV8440ASTT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 59V 2.6A SOT223 |
|
FDD6N50TM-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 6A DPAK |