MOSFET N-CH 59V 2.6A SOT223
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 59 V |
Current - Continuous Drain (Id) @ 25°C: | 2.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 3.5V, 10V |
Rds On (Max) @ Id, Vgs: | 110mOhm @ 2.6A, 10V |
Vgs(th) (Max) @ Id: | 1.9V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 4.5 nC @ 4.5 V |
Vgs (Max): | ±15V |
Input Capacitance (Ciss) (Max) @ Vds: | 155 pF @ 35 V |
FET Feature: | - |
Power Dissipation (Max): | 1.69W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-223 |
Package / Case: | TO-261-4, TO-261AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FDD6N50TM-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 6A DPAK |
|
UPA2521T1H-T2-ATRochester Electronics |
MOSFET N-CH 30V 8A 8VSOF |
|
STF7N65M2STMicroelectronics |
MOSFET N-CH 650V 5A TO220FP |
|
IPU60R1K4C6Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
TPH5R906NH,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 28A 8SOP |
|
SI2314EDS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 3.77A SOT23-3 |
|
IXTT11P50Wickmann / Littelfuse |
MOSFET P-CH 500V 11A TO268 |
|
CPH3350-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 3A 3CPH |
|
NTB35N15T4GRochester Electronics |
MOSFET N-CH 150V 37A D2PAK |
|
DMN3051LDM-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 4A SOT26 |
|
SI4835DDY-T1-E3Vishay / Siliconix |
MOSFET P-CH 30V 13A 8SO |
|
SUM70030E-GE3Vishay / Siliconix |
MOSFET N-CH 100V 150A TO263 |
|
IRFBC40STRLPBFVishay / Siliconix |
MOSFET N-CH 600V 6.2A D2PAK |