RES SMD 27 OHM 2% 3.5W 2512
33.0UF 20.0V
MOSFET N-CH 30V 23A/90A PQFN
LED EMITTER WHT 2700K 1X12 MCPCB
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 23A (Ta), 90A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 4.1mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 2.35V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: | 31 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2380 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 3.6W (Ta), 54W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PQFN (5x6) |
Package / Case: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
2SK2529-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPAW60R600P7SE8228XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 6A TO220 |
|
IPB80N06S2H5ATMA1Rochester Electronics |
MOSFET N-CH 55V 80A TO263-3-2 |
|
IRLR024TRVishay / Siliconix |
MOSFET N-CH 60V 14A DPAK |
|
CSD18537NQ5ATTexas Instruments |
MOSFET N-CH 60V 50A 8VSON |
|
FDA20N50-F109Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 22A TO3PN |
|
NP110N04PUK-E1-AYRenesas Electronics America |
MOSFET N-CH 40V 110A TO263-3 |
|
IXTN210P10TWickmann / Littelfuse |
MOSFET P-CH 100V 210A SOT227B |
|
DMP1022UFDF-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 12V 9.5A 6UDFN |
|
SUM50020E-GE3Vishay / Siliconix |
MOSFET N-CH 60V 120A TO263 |
|
STI6N80K5STMicroelectronics |
MOSFET N-CH 800V 4.5A I2PAK |
|
IRF1404ZSPBFRochester Electronics |
MOSFET N-CH 40V 180A D2PAK |
|
IPP320N20N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 200V 34A TO220-3 |