RES 41.2 OHM 0.5% 1/4W 1206
RES 38.3 OHM 0.5% 1/8W 0805
MOSFET N-CH 200V 34A TO220-3
Type | Description |
---|---|
Series: | OptiMOS™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200 V |
Current - Continuous Drain (Id) @ 25°C: | 34A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 32mOhm @ 34A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 90µA |
Gate Charge (Qg) (Max) @ Vgs: | 29 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2350 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 136W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO220-3 |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
2N7000TASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 200MA TO92-3 |
|
GA50JT12-247GeneSiC Semiconductor |
TRANS SJT 1200V 100A TO247AB |
|
IRF7413ZTRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 13A 8SO |
|
FDMA520PZSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 7.3A 6MICROFET |
|
FDMC86012Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 23A POWER33 |
|
APT24M120LRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 24A TO264 |
|
NTMFS4H02NFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 37A/193A 5DFN |
|
IRFU3410PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 31A IPAK |
|
ZXMN2A02N8TAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 8.3A 8SO |
|
IRFB4410PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 88A TO220AB |
|
BSC067N06LS3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FQB7P20TMSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 200V 7.3A D2PAK |
|
IRFW840BTMRochester Electronics |
N-CHANNEL POWER MOSFET |