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FCB199N65S3

FCB199N65S3

MOSFET N-CH 650V 14A D2PAK

FCB199N65S3

FCB199N65S3

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Part No :

FCB199N65S3

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 650V 14A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
80011200 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 31 - Jan 04 2024
PDF
FCB199N65S3 PDF
Type Description
Series:SuperFET® III
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:199mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1.4mA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1225 pF @ 400 V
FET Feature:-
Power Dissipation (Max):98W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FCB199N65S3 is available at GangBo-ic.com, Please review product page below for detailed information, including FCB199N65S3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FCB199N65S3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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