MOSFET N-CH 60V 11A/36A 5DFN
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta), 36A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 15mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: | 9.7 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 620 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 3.5W (Ta), 37W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Package / Case: | 8-PowerTDFN, 5 Leads |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SUM70030M-GE3Vishay / Siliconix |
MOSFET N-CH 100V 150A TO263-7 |
|
IRF1010EZPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 75A TO220AB |
|
RJK0368DPA-00#J0Rochester Electronics |
MOSFET N-CH 30V 20A 8WPAK |
|
NVMFS5113PLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 10A/64A 5DFN |
|
STH140N6F7-2STMicroelectronics |
MOSFET N-CH 60V 80A H2PAK-2 |
|
IPB80N06S2L07ATMA3IR (Infineon Technologies) |
MOSFET N-CH 55V 80A TO263-3 |
|
RD3H045SPTL1ROHM Semiconductor |
MOSFET P-CH 45V 4.5A TO252 |
|
IRF740STRRPBFVishay / Siliconix |
MOSFET N-CH 400V 10A D2PAK |
|
NTTFS008N04CTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 14A/48A 8WDFN |
|
IRFF433Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTLUS3A18PZTBGSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 5.1A 6UDFN |
|
DMP3012LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 13.2A PWRDI5060 |
|
IPI90R340C3XKSA2IR (Infineon Technologies) |
MOSFET N-CH 900V 15A TO262-3 |