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IPB80N06S2L07ATMA3

IPB80N06S2L07ATMA3

MOSFET N-CH 55V 80A TO263-3

IPB80N06S2L07ATMA3

IPB80N06S2L07ATMA3

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Part No :

IPB80N06S2L07ATMA3

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 55V 80A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
081808 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
IPB80N06S2L07ATMA3 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.7mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:130 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3160 pF @ 25 V
FET Feature:-
Power Dissipation (Max):210W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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