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BSZ180P03NS3EGATMA1

BSZ180P03NS3EGATMA1

Image is for reference, please contact us to get the real picture

Part No :

BSZ180P03NS3EGATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 30V 9A/39.5A TSDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14995 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
BSZ180P03NS3EGATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta), 39.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:18mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3.1V @ 48µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2220 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.1W (Ta), 40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSDSON-8
Package / Case:8-PowerTDFN
BSZ180P03NS3EGATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSZ180P03NS3EGATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSZ180P03NS3EGATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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