MOSFET P-CH 30V 9A/39.5A TSDSON
Type | Description |
---|---|
Series: | OptiMOS™ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Ta), 39.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 18mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 3.1V @ 48µA |
Gate Charge (Qg) (Max) @ Vgs: | 30 nC @ 10 V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 2220 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 2.1W (Ta), 40W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TSDSON-8 |
Package / Case: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
R5009FNXROHM Semiconductor |
MOSFET N-CH 500V 9A TO220FM |
|
FQL40N50Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 40A TO264-3 |
|
SQM40020E_GE3Vishay / Siliconix |
MOSFET N-CH 40V 100A TO263 |
|
BUK7E4R6-60E,127Nexperia |
MOSFET N-CH 60V 100A I2PAK |
|
BSB028N06NN3GXUMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 22A/90A 2WDSON |
|
NTE2385NTE Electronics, Inc. |
MOSFET N-CHANNEL 500V 8A TO220 |
|
BUK9Y72-80E,115Nexperia |
MOSFET N-CH 80V 15A LFPAK56 |
|
AOB15S65LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 15A TO263 |
|
SI4896DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 80V 6.7A 8SO |
|
STL115N10F7AGSTMicroelectronics |
MOSFET N-CH 100V 107A POWERFLAT |
|
NTNS3A91PZT5GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 223MA 3XLLGA |
|
IRF6775MTRPBFIR (Infineon Technologies) |
MOSFET N-CH 150V 4.9A DIRECTFET |
|
FQPF2N80Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 1.5A TO220F |