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BSB028N06NN3GXUMA1

BSB028N06NN3GXUMA1

MOSFET N-CH 60V 22A/90A 2WDSON

BSB028N06NN3GXUMA1

BSB028N06NN3GXUMA1

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Part No :

BSB028N06NN3GXUMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 60V 22A/90A 2WDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
871787 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
BSB028N06NN3GXUMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:22A (Ta), 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:4V @ 102µA
Gate Charge (Qg) (Max) @ Vgs:143 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:12000 pF @ 30 V
FET Feature:-
Power Dissipation (Max):2.2W (Ta), 78W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:MG-WDSON-2, CanPAK M™
Package / Case:3-WDSON
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