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2SK3566(STA4,Q,M)

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MOSFET N-CH 900V 2.5A TO220SIS

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2SK3566(STA4,Q,M)

2SK3566(STA4,Q,M)

Image is for reference, please contact us to get the real picture

Part No :

2SK3566(STA4,Q,M)

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 900V 2.5A TO220SIS
Catalog
Transistors - FETs, MOSFETs - Single
Availability
311531 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
2SK3566(STA4,Q,M) PDF
Type Description
Series:π-MOSIV
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6.4Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:470 pF @ 25 V
FET Feature:-
Power Dissipation (Max):40W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220SIS
Package / Case:TO-220-3 Full Pack
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GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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