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STP25N60M2-EP

STP25N60M2-EP

Image is for reference, please contact us to get the real picture

Part No :

STP25N60M2-EP

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 600V 18A TO220
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11029 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 18 - May 22 2024
PDF
STP25N60M2-EP PDF
Type Description
Series:MDmesh™ M2-EP
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:188mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1090 pF @ 100 V
FET Feature:-
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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