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NTBG020N090SC1

NTBG020N090SC1

SICFET N-CH 900V 9.8A/112A D2PAK

NTBG020N090SC1

NTBG020N090SC1

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Part No :

NTBG020N090SC1

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
SICFET N-CH 900V 9.8A/112A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10198 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:9.8A (Ta), 112A (Tc)
Drive Voltage (Max Rds On, Min Rds On):15V
Rds On (Max) @ Id, Vgs:28mOhm @ 60A, 15V
Vgs(th) (Max) @ Id:4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs:200 nC @ 15 V
Vgs (Max):+19V, -10V
Input Capacitance (Ciss) (Max) @ Vds:4415 pF @ 450 V
FET Feature:-
Power Dissipation (Max):3.7W (Ta), 477W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK-7
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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