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IPB015N04LGATMA1

IPB015N04LGATMA1

MOSFET N-CH 40V 120A D2PAK

IPB015N04LGATMA1

IPB015N04LGATMA1

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Part No :

IPB015N04LGATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 40V 120A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
081508 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
IPB015N04LGATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:346 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:28000 pF @ 25 V
FET Feature:-
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB015N04LGATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB015N04LGATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB015N04LGATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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