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FQPF9N50C

FQPF9N50C

MOSFET N-CH 500V 9A TO220-3

FQPF9N50C

FQPF9N50C

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Part No :

FQPF9N50C

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 500V 9A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
423558 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 23 - Jan 27 2025
PDF
FQPF9N50C PDF
Type Description
Series:QFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:800mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1030 pF @ 25 V
FET Feature:-
Power Dissipation (Max):44W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
FQPF9N50C is available at GangBo-ic.com, Please review product page below for detailed information, including FQPF9N50C price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQPF9N50C to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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