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RS1E200BNTB

RS1E200BNTB

MOSFET N-CH 30V 20A 8HSOP

RS1E200BNTB

RS1E200BNTB

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Part No :

RS1E200BNTB

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 30V 20A 8HSOP
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10374 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 08 - May 12 2024
PDF
RS1E200BNTB PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:59 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3100 pF @ 15 V
FET Feature:-
Power Dissipation (Max):3W (Ta), 25W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HSOP
Package / Case:8-PowerTDFN
RS1E200BNTB is available at GangBo-ic.com, Please review product page below for detailed information, including RS1E200BNTB price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RS1E200BNTB to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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