RF MOSFET HEMT 28V 440166
Type | Description |
---|---|
Series: | GaN |
Package: | Tray |
Part Status: | Active |
Transistor Type: | HEMT |
Frequency: | 4.5GHz ~ 6GHz |
Gain: | 11dB |
Voltage - Test: | 28 V |
Current Rating (Amps): | - |
Noise Figure: | - |
Current - Test: | 250 mA |
Power - Output: | 30W |
Voltage - Rated: | 84 V |
Package / Case: | 440166 |
Supplier Device Package: | 440166 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BLA9H0912LS-700GUAmpleon |
BLA9H0912LS-700G/SOT502/TRAY |
|
BLC9G15LS-400AVTYAmpleon |
RF FET LDMOS 65V 16DB SOT12583 |
|
BLF8G10LS-300PUAmpleon |
RF FET LDMOS 65V 20.5DB SOT539B |
|
STAC4933STMicroelectronics |
MOSF RF N CH 200V 40A STAC177B |
|
BLF182XRSUAmpleon |
RF FET LDMOS 135V 28DB SOT1121B |
|
BLM7G1822S-40PBYAmpleon |
RF FET LDMOS 65V 31.5DB SOT12111 |
|
AFT18HW355SR5Rochester Electronics |
RF N CHANNEL POWER MOSFET |
|
BLC10G22XS-400AVTZAmpleon |
BLC10G22XS-400AVT/SOT1258/TRAY |
|
NE5550779A-T1-ARochester Electronics |
RF POWER N-CHANNEL, MOSFET |
|
MRFX1K80HR5NXP Semiconductors |
RF MOSFET LDMOS 65V NI-1230H-4S |
|
CLF1G0035-200PURochester Electronics |
RF TRANSISTOR |
|
MRFE6VP5600HR6NXP Semiconductors |
FET RF 2CH 130V 230MHZ NI1230 |
|
BLF178XR,112Ampleon |
RF MOSFET LDMOS DL 50V SOT539A |