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NE5550779A-T1-A

NE5550779A-T1-A

RF POWER N-CHANNEL, MOSFET

C38TF1200JB

C38TF1200JB

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NE5550779A-T1-A

NE5550779A-T1-A

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Part No :

NE5550779A-T1-A

Manufacturer
Rochester Electronics
Description
RF POWER N-CHANNEL, MOSFET
Catalog
Transistors - FETs, MOSFETs - RF
Availability
11000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
NE5550779A-T1-A PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
Transistor Type:LDMOS
Frequency:900MHz
Gain:22dB
Voltage - Test:7.5 V
Current Rating (Amps):2.1A
Noise Figure:-
Current - Test:140 mA
Power - Output:38.5dBm
Voltage - Rated:30 V
Package / Case:4-SMD, Flat Leads
Supplier Device Package:79A
NE5550779A-T1-A is available at GangBo-ic.com, Please review product page below for detailed information, including NE5550779A-T1-A price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NE5550779A-T1-A to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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