







 
                            FET RF 110V 1.03GHZ NI-780S
 
                            LIGHT PIPE 4MM RND LENS 6.5"
| Type | Description | 
|---|---|
| Series: | - | 
| Package: | Tape & Reel (TR) | 
| Part Status: | Active | 
| Transistor Type: | LDMOS | 
| Frequency: | 1.03GHz | 
| Gain: | 19.7dB | 
| Voltage - Test: | 50 V | 
| Current Rating (Amps): | - | 
| Noise Figure: | - | 
| Current - Test: | 200 mA | 
| Power - Output: | 500W | 
| Voltage - Rated: | 110 V | 
| Package / Case: | NI-780S | 
| Supplier Device Package: | NI-780S | 
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|   | BLF6G20LS-110,112Ampleon | RF FET LDMOS 65V 19DB SOT502B | 
|   | BLC8G27LS-210PVZAmpleon | RF FET LDMOS 65V 17DB SOT12513 | 
|   | BLC8G27LS-210PVYAmpleon | RF FET LDMOS 65V 17DB SOT12513 | 
|   | BLL1214-250Rochester Electronics | RF PFET, 1-ELEMENT, L BAND, SILI | 
|   | BF511,215NXP Semiconductors | JFET N-CH 20V 30MA SOT23 | 
|   | MRF176GUMetelics (MACOM Technology Solutions) | FET RF 2CH 125V 225MHZ 375-04 | 
|   | CG2H80120D-GP4Wolfspeed - a Cree company | 120W GAN HEMT 28V 8.0GHZ DIE, G2 | 
|   | MRF7P20040HSR3NXP Semiconductors | FET RF 2CH 65V 2.03GHZ NI780HS-4 | 
|   | IRF225Rochester Electronics | N-CHANNEL HERMETIC MOS HEXFET | 
|   | CLF1G0035-100PRochester Electronics | RF SMALL SIGNAL FIELD-EFFECT TRA | 
|   | BLA1011S-200R,112Rochester Electronics | RF TRANSISTOR | 
|   | NPT35015DMetelics (MACOM Technology Solutions) | HEMT N-CH 28V 18W 3300-3800MHZ | 
|   | BLC10G18XS-360AVTYAmpleon | BLC10G18XS-360AV/SOT1258/REELD |