RES SMD 332 OHM 0.1% 1/5W 0603
120W GAN HEMT 28V 8.0GHZ DIE, G2
RF-DETECTING CONTROLLER
Type | Description |
---|---|
Series: | * |
Package: | Tray |
Part Status: | Active |
Transistor Type: | - |
Frequency: | - |
Gain: | - |
Voltage - Test: | - |
Current Rating (Amps): | - |
Noise Figure: | - |
Current - Test: | - |
Power - Output: | - |
Voltage - Rated: | - |
Package / Case: | - |
Supplier Device Package: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
MRF7P20040HSR3NXP Semiconductors |
FET RF 2CH 65V 2.03GHZ NI780HS-4 |
![]() |
IRF225Rochester Electronics |
N-CHANNEL HERMETIC MOS HEXFET |
![]() |
CLF1G0035-100PRochester Electronics |
RF SMALL SIGNAL FIELD-EFFECT TRA |
![]() |
BLA1011S-200R,112Rochester Electronics |
RF TRANSISTOR |
![]() |
NPT35015DMetelics (MACOM Technology Solutions) |
HEMT N-CH 28V 18W 3300-3800MHZ |
![]() |
BLC10G18XS-360AVTYAmpleon |
BLC10G18XS-360AV/SOT1258/REELD |
![]() |
BLC2425M10LS500PZAmpleon |
BLC2425M10LS500P/SOT1250/TRAYDP |
![]() |
HIP5010ISRochester Electronics |
COMPLEMENTARY DRIVE HALF-BRIDGE |
![]() |
BLS6G3135S-20,112Rochester Electronics |
RF PFET, 1-ELEMENT, S BAND, SILI |
![]() |
2N5485NTE Electronics, Inc. |
T-JFET N CHANNEL |
![]() |
MRF6S20010GNR1NXP Semiconductors |
RF MOSFET LDMOS 28V TO270-2 GULL |
![]() |
BLA9G1011L-300GUAmpleon |
RF MOSFET LDMOS 32V SOT502F |
![]() |
BLC2425M9LS250ZAmpleon |
RF FET LDMOS 65V 18.5DB SOT12701 |