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APTC80H29T1G

APTC80H29T1G

MOSFET 4N-CH 800V 15A SP1

APTC80H29T1G

APTC80H29T1G

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Part No :

APTC80H29T1G

Manufacturer
Microsemi
Description
MOSFET 4N-CH 800V 15A SP1
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
077607 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 24 - Feb 28 2025
PDF
APTC80H29T1G PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:4 N-Channel (H-Bridge)
FET Feature:Standard
Drain to Source Voltage (Vdss):800V
Current - Continuous Drain (Id) @ 25°C:15A
Rds On (Max) @ Id, Vgs:290mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id:3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:90nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:2254pF @ 25V
Power - Max:156W
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:SP1
Supplier Device Package:SP1
APTC80H29T1G is available at GangBo-ic.com, Please review product page below for detailed information, including APTC80H29T1G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for APTC80H29T1G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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