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QJD1210010

QJD1210010

MOSFET 2N-CH 1200V 100A SIC

QJD1210010

QJD1210010

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Part No :

QJD1210010

Manufacturer
Powerex, Inc.
Description
MOSFET 2N-CH 1200V 100A SIC
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
197619 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 19 - Feb 23 2025
PDF
QJD1210010 PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Rds On (Max) @ Id, Vgs:25mOhm @ 100A, 20V
Vgs(th) (Max) @ Id:5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs:500nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds:10200pF @ 800V
Power - Max:1080W
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
QJD1210010 is available at GangBo-ic.com, Please review product page below for detailed information, including QJD1210010 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for QJD1210010 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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