PM-MOSFET-SIC-SBD~-SP3F
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | 2 N Channel (Phase Leg) |
FET Feature: | Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: | 337A (Tc) |
Rds On (Max) @ Id, Vgs: | 7.8mOhm @ 160A, 20V |
Vgs(th) (Max) @ Id: | 2.8V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: | 928nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds: | 12.08pF @ 1000V |
Power - Max: | 1.409kW (Tc) |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | SP3F |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RF1S25N06SMR4643Rochester Electronics |
25A, 60V, 0.047 OHM, N-CHANNEL |
|
NTMFD020N06CT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V T6 8DFN |
|
RFD3055RLESM9ARochester Electronics |
12A, 60V, 0.15OHM, N-CHANNEL, |
|
RFD20N03SM9AR4761Rochester Electronics |
20A, 30V, 0.025 OHM, N-CHANNEL |
|
DMT47M2LDV-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 31V-40V POWERDI333 |
|
UPA2561T1H-T1-ATRochester Electronics |
POWER, 4.5A, 20V, N-CH MOSFET |
|
FDPC8011SRochester Electronics |
25V ASYMMETRIC DUAL N-CHANNEL PO |
|
PMDT290UCEHNexperia |
PMDT290UCE/SOT666/SOT6 |
|
2SJ655-MG5-SYRochester Electronics |
GENERAL-PURPOSE SWITCHING DEVICE |
|
PMDT290UNEYLNexperia |
PMDT290UNE/SOT666/SOT6 |
|
PMDXB550UNE,147-NEXRochester Electronics |
0.59A, 30V, 2-ELEMENT, N CHANNEL |
|
DMT6017LDV-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 61V-100V POWERDI33 |
|
IAUC60N04S6N050HATMA1IR (Infineon Technologies) |
IAUC60N04S6N050HATMA1 |