MOSFET DL N-CH 30V PPAIR 3X3FDC
Type | Description |
---|---|
Series: | TrenchFET® Gen IV |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual), Schottky |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc) |
Rds On (Max) @ Id, Vgs: | 4.5mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 22nC, 62nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1100pF, 3150pF @ 15V |
Power - Max: | 3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-PowerPair™ |
Supplier Device Package: | 6-PowerPair™ |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
DMN2024UVT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V TSOT26 |
|
2SK3481-Z-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SQJB60EP-T2_GE3Vishay / Siliconix |
DUAL N-CHANNEL 60-V (D-S) 175C M |
|
MCH5802-TL-E-ONRochester Electronics |
P-CHANNEL SILICON MOSFET |
|
APTC60HM45T1GRoving Networks / Microchip Technology |
MOSFET 4N-CH 600V 49A SP1 |
|
PMCXB900UEL/S500,147Rochester Electronics |
0.6A, 20V, 2-ELEMENT, N CHANNEL |
|
RFP70N06S5001Rochester Electronics |
70A, 60V, 0.014OHM, N-CHANNEL |
|
APTM50DDA10T3GRoving Networks / Microchip Technology |
MOSFET 2N-CH 500V 37A SP3 |
|
APTM20HM20STGRoving Networks / Microchip Technology |
MOSFET 4N-CH 200V 89A SP4 |
|
IRFP250S2453Rochester Electronics |
33A, 200V, 0.085 OHM, N-CHANNEL |
|
DMP2200UFCL-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 8V~24V U-DFN1616-6 |
|
IRFAUIRF540ZRochester Electronics |
AUTOMOTIVE HEXFET N-CHANNEL POWE |
|
IRF9640S2497Rochester Electronics |
11A, 200V, 0.500 OHM, P-CHANNEL |