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SIZF360DT-T1-GE3

SIZF360DT-T1-GE3

MOSFET DL N-CH 30V PPAIR 3X3FDC

SIZF360DT-T1-GE3

SIZF360DT-T1-GE3

Image is for reference, please contact us to get the real picture

Part No :

SIZF360DT-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET DL N-CH 30V PPAIR 3X3FDC
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
734473 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual), Schottky
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs:4.5mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22nC, 62nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1100pF, 3150pF @ 15V
Power - Max:3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-PowerPair™
Supplier Device Package:6-PowerPair™
SIZF360DT-T1-GE3 is available at GangBo-ic.com, Please review product page below for detailed information, including SIZF360DT-T1-GE3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SIZF360DT-T1-GE3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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