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SQJB60EP-T2_GE3

SQJB60EP-T2_GE3

DUAL N-CHANNEL 60-V (D-S) 175C M

SQJB60EP-T2_GE3

SQJB60EP-T2_GE3

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Part No :

SQJB60EP-T2_GE3

Manufacturer
Vishay / Siliconix
Description
DUAL N-CHANNEL 60-V (D-S) 175C M
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
764476 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 25 - Sep 29 2024
Type Description
Series:Automotive, AEC-Q101, TrenchFET®
Package:Tape & Reel (TR)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Rds On (Max) @ Id, Vgs:12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1600pF @ 25V
Power - Max:48W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:PowerPAK® SO-8 Dual
Supplier Device Package:PowerPAK® SO-8 Dual
SQJB60EP-T2_GE3 is available at GangBo-ic.com, Please review product page below for detailed information, including SQJB60EP-T2_GE3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SQJB60EP-T2_GE3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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