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SQJ912DEP-T1_GE3

SQJ912DEP-T1_GE3

Image is for reference, please contact us to get the real picture

Part No :

SQJ912DEP-T1_GE3

Manufacturer
Vishay / Siliconix
Description
AUTOMOTIVE DUAL N-CHANNEL 40 V (
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
13050 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
Type Description
Series:Automotive, AEC-Q101, TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):40V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Rds On (Max) @ Id, Vgs:7.3mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:-
Power - Max:27W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:PowerPAK® SO-8 Dual
Supplier Device Package:PowerPAK® SO-8 Dual
SQJ912DEP-T1_GE3 is available at GangBo-ic.com, Please review product page below for detailed information, including SQJ912DEP-T1_GE3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SQJ912DEP-T1_GE3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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