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BSM600D12P3G001

BSM600D12P3G001

1200V, 576A, HALF BRIDGE, FULL S

BSM600D12P3G001

BSM600D12P3G001

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Part No :

BSM600D12P3G001

Manufacturer
ROHM Semiconductor
Description
1200V, 576A, HALF BRIDGE, FULL S
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
564356 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:2 N-Channel (Half Bridge)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:600A (Tc)
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:5.6V @ 182mA
Gate Charge (Qg) (Max) @ Vgs:-
Input Capacitance (Ciss) (Max) @ Vds:31000pF @ 10V
Power - Max:2450W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
BSM600D12P3G001 is available at GangBo-ic.com, Please review product page below for detailed information, including BSM600D12P3G001 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSM600D12P3G001 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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