POWER, N-CHANNEL MOSFET
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 3.8A |
Rds On (Max) @ Id, Vgs: | 65mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 2.9nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 220pF @ 10V |
Power - Max: | 1.1W |
Operating Temperature: | - |
Mounting Type: | Surface Mount |
Package / Case: | 6-VDFN Exposed Pad |
Supplier Device Package: | 6-MLP (3x3) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
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