MOSFET 2N-CH 200V 33A I4-PAC
Type | Description |
---|---|
Series: | HiPerFET™ |
Package: | Tube |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 33A |
Rds On (Max) @ Id, Vgs: | 40mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 90nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 3700pF @ 25V |
Power - Max: | 125W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | i4-Pac™-5 |
Supplier Device Package: | ISOPLUS i4-PAC™ |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
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