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BSM300D12P3E005

BSM300D12P3E005

SILICON CARBIDE POWER MODULE. B

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BSM300D12P3E005

BSM300D12P3E005

Image is for reference, please contact us to get the real picture

Part No :

BSM300D12P3E005

Manufacturer
ROHM Semiconductor
Description
SILICON CARBIDE POWER MODULE. B
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
984098 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 18 - Feb 22 2025
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:2 N-Channel (Half Bridge)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:300A (Tc)
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:5.6V @ 91mA
Gate Charge (Qg) (Max) @ Vgs:-
Input Capacitance (Ciss) (Max) @ Vds:14000pF @ 10V
Power - Max:1260W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
BSM300D12P3E005 is available at GangBo-ic.com, Please review product page below for detailed information, including BSM300D12P3E005 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSM300D12P3E005 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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