POWER FIELD-EFFECT TRANSISTOR
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
FET Type: | 2 N-Channel (Half Bridge) |
FET Feature: | Logic Level Gate, 4.5V Drive |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 15A, 32A |
Rds On (Max) @ Id, Vgs: | 9.2mOhm @ 7.5A, 10V |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | 6.2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1130pF @ 10V |
Power - Max: | 10W, 20W |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-WFDFN |
Supplier Device Package: | 8-DFN (5x6) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
MTI85W100GC-SMDWickmann / Littelfuse |
IGBT MOD MOSFET SIXPACK ISOPLUS |
|
QS6K21FRATRROHM Semiconductor |
45V NCH+NCH SMALL SIGNAL MOSFET |
|
NTMFD5C466NT1GSanyo Semiconductor/ON Semiconductor |
40V 8.1 MOHM T8 S08FL DUA |
|
MRF7S15100HSR3128Rochester Electronics |
N CHANNEL ENHANCEMENT-MODE RF PO |
|
NTD4906NAT4HRochester Electronics |
NTD4906N - 30V, 54A, N-CHANNEL |
|
APTM50AM17FGRoving Networks / Microchip Technology |
MOSFET 2N-CH 500V 180A SP6 |
|
MRF18030BLSR3Rochester Electronics |
RF L BAND, N-CHANNEL |
|
CA3140R1167Rochester Electronics |
OPERATIONAL AMPLIFIER |
|
NTMFD030N06CT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V T6 8DFN |
|
RF1S640Rochester Electronics |
18A, 200V, 0.180 OHM, N-CHANNEL |
|
APTM100H45FT3GRoving Networks / Microchip Technology |
MOSFET 4N-CH 1000V 18A SP3 |
|
STL52DN4LF7AGSTMicroelectronics |
AUTOMOTIVE-GRADE DUAL N-CHANNEL |
|
PMDXB600UNEL,147Rochester Electronics |
0.6A, 20V, 2-ELEMENT, N CHANNEL, |