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SI7872DP-T1-E3

SI7872DP-T1-E3

MOSFET 2N-CH 30V 6.4A PPAK SO-8

SI7872DP-T1-E3

SI7872DP-T1-E3

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Part No :

SI7872DP-T1-E3

Manufacturer
Vishay / Siliconix
Description
MOSFET 2N-CH 30V 6.4A PPAK SO-8
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
207920 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 11 - Nov 15 2024
PDF
SI7872DP-T1-E3 PDF
Type Description
Series:LITTLE FOOT®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:2 N-Channel (Half Bridge)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:6.4A
Rds On (Max) @ Id, Vgs:22mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:-
Power - Max:1.4W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:PowerPAK® SO-8 Dual
Supplier Device Package:PowerPAK® SO-8 Dual
SI7872DP-T1-E3 is available at GangBo-ic.com, Please review product page below for detailed information, including SI7872DP-T1-E3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SI7872DP-T1-E3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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