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FDG6321C-F169

FDG6321C-F169

INTEGRATED CIRCUIT

FDG6321C-F169

FDG6321C-F169

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Part No :

FDG6321C-F169

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
INTEGRATED CIRCUIT
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
287928 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 14 - Nov 18 2024
PDF
FDG6321C-F169 PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):25V
Current - Continuous Drain (Id) @ 25°C:500mA (Ta), 410mA (Ta)
Rds On (Max) @ Id, Vgs:450mOhm @ 500mA, 4.5V, 1.1Ohm @ 410mA, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:2.3nC @ 4.5V, 1.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:50pF @ 10V, 62pF @ 10V
Power - Max:300mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
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