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SI7911DN-T1-GE3

SI7911DN-T1-GE3

MOSFET 2P-CH 20V 4.2A 1212-8

SI7911DN-T1-GE3

SI7911DN-T1-GE3

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Part No :

SI7911DN-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET 2P-CH 20V 4.2A 1212-8
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
827882 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 29 - Jan 02 2024
PDF
SI7911DN-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:4.2A
Rds On (Max) @ Id, Vgs:51mOhm @ 5.7A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:-
Power - Max:1.3W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:PowerPAK® 1212-8 Dual
Supplier Device Package:PowerPAK® 1212-8 Dual
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