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SI5509DC-T1-GE3

SI5509DC-T1-GE3

MOSFET N/P-CH 20V 6.1A 1206-8

SI5509DC-T1-GE3

SI5509DC-T1-GE3

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Part No :

SI5509DC-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N/P-CH 20V 6.1A 1206-8
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
927892 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 30 - Jan 03 2024
PDF
SI5509DC-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:6.1A, 4.8A
Rds On (Max) @ Id, Vgs:52mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:455pF @ 10V
Power - Max:4.5W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SMD, Flat Lead
Supplier Device Package:1206-8 ChipFET™
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