MOSFET 2N-CH 50V 0.51A SSOT6
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 50V |
Current - Continuous Drain (Id) @ 25°C: | 510mA |
Rds On (Max) @ Id, Vgs: | 2Ohm @ 510mA, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 1nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 20pF @ 25V |
Power - Max: | 700mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | SuperSOT™-6 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AON2802Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 30V 2A 6DFN |
|
UPA672T-T1-ARochester Electronics |
POWER, N-CHANNEL MOSFET |
|
SI7220DN-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 60V 3.4A 1212-8 |
|
SI4909DY-T1-GE3Vishay / Siliconix |
MOSFET 2P-CH 40V 8A 8SO |
|
FDMC8200SSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 6A/8.5A 8MLP |
|
IPG16N10S461AATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 100V 16A 8TDSON |
|
SIA913ADJ-T1-GE3Vishay / Siliconix |
MOSFET 2P-CH 12V 4.5A SC70-6 |
|
PHN203,518Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
FDMS3600ASSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 25V 15A/30A POWER56 |
|
MSCSM70VM10C4AGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-SP4 |
|
ALD114804APCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 16DIP |
|
FDS9926ASanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 20V 6.5A 8SOIC |
|
SH8JC5TB1ROHM Semiconductor |
-60V DUAL PCH+PCH, SOP8, POWER M |