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SQJQ900E-T1_GE3

SQJQ900E-T1_GE3

MOSFET 2 N-CH 40V POWERPAK8X8

SQJQ900E-T1_GE3

SQJQ900E-T1_GE3

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Part No :

SQJQ900E-T1_GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET 2 N-CH 40V POWERPAK8X8
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
131213 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 14 - Nov 18 2024
PDF
SQJQ900E-T1_GE3 PDF
Type Description
Series:Automotive, AEC-Q101, TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):40V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Rds On (Max) @ Id, Vgs:3.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:120nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:5900pF @ 20V
Power - Max:75W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:PowerPAK® 8 x 8 Dual
Supplier Device Package:PowerPAK® 8 x 8 Dual
SQJQ900E-T1_GE3 is available at GangBo-ic.com, Please review product page below for detailed information, including SQJQ900E-T1_GE3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SQJQ900E-T1_GE3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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