MOSFET 2N-CH 10.6V 8SOIC
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) Matched Pair |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 10.6V |
Current - Continuous Drain (Id) @ 25°C: | - |
Rds On (Max) @ Id, Vgs: | 75Ohm @ 5V |
Vgs(th) (Max) @ Id: | 1V @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
Power - Max: | 500mW |
Operating Temperature: | 0°C ~ 70°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FDMS7600ASSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 12A/22A POWER56 |
|
BSS138DW-7-FZetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 50V 0.2A SC70-6 |
|
DMC31D5UDJ-7BZetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 30V SOT963 |
|
IPA180N10N3GRochester Electronics |
28A, 100V, 0.018OHM, N-CHANNEL, |
|
ALD110814PCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 16DIP |
|
CSD88599Q5DCTexas Instruments |
MOSFET 2 N-CH 60V 22-VSON-CLIP |
|
BSO150N03Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
RF1S45N06LERochester Electronics |
45A, 60V, 0.028OHM, N-CHANNEL, |
|
SI1922EDH-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 20V 1.3A SOT-363 |
|
SSM6N44FE,LMToshiba Electronic Devices and Storage Corporation |
MOSFET 2N-CH 30V 0.1A ES6 |
|
DMTH4011SPD-13Zetex Semiconductors (Diodes Inc.) |
MOSFETDUAL N-CHAN 40VPOWERDI5060 |
|
ECH8695R-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 24V 11A SOT28 |
|
SI7994DP-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 30V 60A PPAK SO-8 |