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SI1922EDH-T1-GE3

SI1922EDH-T1-GE3

MOSFET 2N-CH 20V 1.3A SOT-363

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SI1922EDH-T1-GE3

SI1922EDH-T1-GE3

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Part No :

SI1922EDH-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET 2N-CH 20V 1.3A SOT-363
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
11539 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 18 - Feb 22 2025
PDF
SI1922EDH-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:1.3A
Rds On (Max) @ Id, Vgs:198mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:2.5nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds:-
Power - Max:1.25W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-70-6 (SOT-363)
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