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SI7252DP-T1-GE3

SI7252DP-T1-GE3

MOSFET 2N-CH 100V 36.7A PPAK 8SO

SI7252DP-T1-GE3

SI7252DP-T1-GE3

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Part No :

SI7252DP-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET 2N-CH 100V 36.7A PPAK 8SO
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
10846 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
SI7252DP-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):100V
Current - Continuous Drain (Id) @ 25°C:36.7A
Rds On (Max) @ Id, Vgs:18mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1170pF @ 50V
Power - Max:46W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:PowerPAK® SO-8 Dual
Supplier Device Package:PowerPAK® SO-8 Dual
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