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SI5513CDC-T1-GE3

SI5513CDC-T1-GE3

MOSFET N/P-CH 20V 4A 1206-8

SI5513CDC-T1-GE3

SI5513CDC-T1-GE3

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Part No :

SI5513CDC-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N/P-CH 20V 4A 1206-8
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
16819 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
SI5513CDC-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:4A, 3.7A
Rds On (Max) @ Id, Vgs:55mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:4.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:285pF @ 10V
Power - Max:3.1W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SMD, Flat Lead
Supplier Device Package:1206-8 ChipFET™
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