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NTMFD4C85NT1G

NTMFD4C85NT1G

POWER FIELD-EFFECT TRANSISTOR

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NTMFD4C85NT1G

NTMFD4C85NT1G

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Part No :

NTMFD4C85NT1G

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
183040 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
NTMFD4C85NT1G PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:2 N-Channel (Dual) Asymmetrical
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:15.4A, 29.7A
Rds On (Max) @ Id, Vgs:3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1960pF @ 15V
Power - Max:1.13W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
Supplier Device Package:8-DFN (5x6)
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