MOSFET 2P-CH 20V 0.55A SOT666
Type | Description |
---|---|
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 550mA |
Rds On (Max) @ Id, Vgs: | 850mOhm @ 400mA, 4.5V |
Vgs(th) (Max) @ Id: | 1.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 1.14nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 87pF @ 10V |
Power - Max: | 330mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SOT-666 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
PSMN4R8-100BSE,118Rochester Electronics |
N CHANNEL 100V 4.8 MOHM STANDAR |
|
SH8K37GZETBROHM Semiconductor |
4V DRIVE NCH+NCH MOSFET. SH8K37G |
|
TPC8408,LQ(SToshiba Electronic Devices and Storage Corporation |
MOSFET N/P-CH 40V 6.1A/5.3A 8SOP |
|
NTJD4158CT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 30V/20V SOT363 |
|
PSMN035-150BRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 5 |
|
SI7998DP-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 30V 25A PPAK SO-8 |
|
SIZF916DT-T1-GE3Vishay / Siliconix |
MOSFET N-CH DUAL 30V |
|
SQJ946EP-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CH 40V POWERPAK SO8 |
|
RM9926Rectron USA |
MOSFET 2 N-CHANNEL 20V 6A 8SOP |
|
SI7949DP-T1-E3Vishay / Siliconix |
MOSFET 2P-CH 60V 3.2A PPAK SO-8 |
|
CJ3139KDW-GComchip Technology |
MOSFET 2PCH 20V 660MA SOT363 |
|
UT6K3TCRROHM Semiconductor |
30V NCH+NCH MIDDLE POWER MOSFET |
|
SI4946CDY-T1-GE3Vishay / Siliconix |
MOSFET N-CHAN DUAL 60V SO-8 |