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SI7998DP-T1-GE3

SI7998DP-T1-GE3

MOSFET 2N-CH 30V 25A PPAK SO-8

SI7998DP-T1-GE3

SI7998DP-T1-GE3

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Part No :

SI7998DP-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET 2N-CH 30V 25A PPAK SO-8
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
10526 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
SI7998DP-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:25A, 30A
Rds On (Max) @ Id, Vgs:9.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1100pF @ 15V
Power - Max:22W, 40W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:PowerPAK® SO-8 Dual
Supplier Device Package:PowerPAK® SO-8 Dual
SI7998DP-T1-GE3 is available at GangBo-ic.com, Please review product page below for detailed information, including SI7998DP-T1-GE3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SI7998DP-T1-GE3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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