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IRFH4257DTRPBF

IRFH4257DTRPBF

IRFH4257 - HEXFET POWER MOSFET

IRFH4257DTRPBF

IRFH4257DTRPBF

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Part No :

IRFH4257DTRPBF

Manufacturer
Rochester Electronics
Description
IRFH4257 - HEXFET POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
12502 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
IRFH4257DTRPBF PDF
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):25V
Current - Continuous Drain (Id) @ 25°C:25A
Rds On (Max) @ Id, Vgs:3.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.1V @ 35µA
Gate Charge (Qg) (Max) @ Vgs:15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:1321pF @ 13V
Power - Max:25W, 28W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerVDFN
Supplier Device Package:Dual PQFN (5x4)
IRFH4257DTRPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFH4257DTRPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFH4257DTRPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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