MOSFET N/P-CH 60V 8-SOIC
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A, 3.2A |
Rds On (Max) @ Id, Vgs: | 56mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 10.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 540pF @ 30V |
Power - Max: | 2W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FS30KM-3#B00Rochester Electronics |
N-CHANNEL , 150V, 30A |
|
DMP2004DWK-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2P-CH 20V 0.43A SOT-363 |
|
SSM6L40TU,LFToshiba Electronic Devices and Storage Corporation |
X34 PB-F UF6 S-MOS (LF) TRANSIST |
|
2N7002K36Rectron USA |
MOSFET 2 N-CH 60V 250MA SOT23-6 |
|
SSM6P15FU,LFToshiba Electronic Devices and Storage Corporation |
SMALL SIGNAL MOSFET P-CH X 2 VDS |
|
CSD87588NTTexas Instruments |
MOSFET 2N-CH 30V 25A 5PTAB |
|
NTJD5121NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 60V 295MA SOT363 |
|
SIA777EDJ-T1-GE3Vishay / Siliconix |
MOSFET N/P-CH 20V/12V SC70-6L |
|
FX30KMJ-06#B00Rochester Electronics |
HIGH SPEED SWITCHING P CHANNEL , |
|
AO4854Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 30V 8A 8SOIC |
|
UM6K31NFHATCNROHM Semiconductor |
2.5V DRIVE NCH+NCH MOSFET |
|
FPF1C2P5BF07ARochester Electronics |
INSULATED GATE BIPOLAR TRANSISTO |
|
SIS932EDN-T1-GE3Vishay / Siliconix |
MOSFET N-CH DL 30V PWRPAK 1212-8 |